Product Summary

The FQPF2N60C is a N-Channel enhancement mode power field effect transistor. The FQPF2N60C is produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. The FQPF2N60C is well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.

Parametrics

FQPF2N60C absolute maximum ratings: (1)VDSS Drain-Source Voltage: 600V; (2)ID Drain Current - Continuous (TC = 25℃): 2.0A; (3)- Continuous (TC = 100℃): 1.35A; (4)IDM Drain Current - Pulsed: 88A; (5)VGSS Gate-Source Voltage: ±30 V; (6)EAS Single Pulsed Avalanche Energ: 120 mJ; (7)IAR Avalanche Current: 2.0 A; (8)EAR Repetitive Avalanche Energy: 5.4 mJ; (9)dv/dt Peak Diode Recovery dv/dt: 4.5 V/ns; (10)PD Power Dissipation (TC = 25℃): 54W; (11)TJ, TSTG Operating and Storage Temperature Range: -55 to +150℃; (12)TL, Maximum lead temperature: 300℃.

Features

FQPF2N60C features: (1)2.0A, 600V, RDS(on) = 4.7Ω @VGS = 10 V; (2)Low gate charge ( typical 8.5 nC); (3)Low Crss ( typical 4.3 pF); (4)Fast switching; (5)100% avalanche tested; (6)Improved dv/dt capability.

Diagrams

FQPF2N60C circuit

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