(China (Mainland))
Product Summary
The BSS84 is a P-Channel enhancement mode field effect transistor. It is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. The BSS84 is particularly suited to low voltage applications requiring a low current high side switch.
Parametrics
BSS84 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -50V; (2)VGSS Gate-Source Voltage: ±20V; (3)ID Drain Current – Continuous: -0.13A; Pulsed: -0.52A; (4)Maximum Power Dissipation, PD: 0.36W; Derate Above 25℃: 2.9mW/℃; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: -55 to +150℃; (6)TL, Maximum Lead Temperature: 300℃.
Features
BSS84 features: (1)-0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5 V; (2)Voltage controlled p-channel small signal switch; (3)High density cell design for low RDS(ON); (4)High saturation current.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BSS84 |
Fairchild Semiconductor |
MOSFET SOT-23 P-CH ENHANCE |
Data Sheet |
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 |
BSS84(Z) |
Other |
|
Data Sheet |
Negotiable |
|
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 |
BSS84_D87Z |
Fairchild Semiconductor |
MOSFET P-Ch Spec Enhance Mode Field Effect |
Data Sheet |
Negotiable |
|
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|
BSS84_Q |
Fairchild Semiconductor |
MOSFET P-Channel Enhance |
Data Sheet |
Negotiable |
|
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|
BSS8402DW |
Other |
|
Data Sheet |
Negotiable |
|
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 |
BSS84-7-F |
Diodes Inc. |
MOSFET -50V 250mW |
Data Sheet |
|
|
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 |
BSS84AK,215 |
NXP Semiconductors |
MOSFET P-CH -50 V -180 mA |
Data Sheet |
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 |
BSS84AKM,315 |
NXP Semiconductors |
MOSFET P-CH -50 V -230 mA 50V 230mA |
Data Sheet |
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