(China (Mainland))
Product Summary
The BSS84 is a P-Channel enhancement mode field effect transistor. It is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13A DC and can deliver current up to 0.52A. The BSS84 is particularly suited to low voltage applications requiring a low current high side switch.
Parametrics
BSS84 absolute maximum ratings: (1)VDSS Drain-Source Voltage: -50V; (2)VGSS Gate-Source Voltage: ±20V; (3)ID Drain Current – Continuous: -0.13A; Pulsed: -0.52A; (4)Maximum Power Dissipation, PD: 0.36W; Derate Above 25℃: 2.9mW/℃; (5)TJ, TSTG, Operating and Storage Junction Temperature Range: -55 to +150℃; (6)TL, Maximum Lead Temperature: 300℃.
Features
BSS84 features: (1)-0.13A, -50V. RDS(ON) = 10Ω @ VGS = -5 V; (2)Voltage controlled p-channel small signal switch; (3)High density cell design for low RDS(ON); (4)High saturation current.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 BSS84 |
Fairchild Semiconductor |
MOSFET SOT-23 P-CH ENHANCE |
Data Sheet |
|
|
||||||||||||
 |
BSS8402DW-7-F |
Diodes Inc. |
MOSFET 60 / -50V 200mW |
Data Sheet |
|
|
||||||||||||
 |
BSS84AKT,115 |
NXP Semiconductors |
MOSFET P-CH -50 V -150 mA |
Data Sheet |
|
|
||||||||||||
 |
BSS84LT1G |
ON Semiconductor |
MOSFET 50V 130mA P-Channel |
Data Sheet |
|
|
||||||||||||
 |
BSS84P H6327 |
Infineon Technologies |
MOSFET P-KANAL |
Data Sheet |
|
|
||||||||||||
 |
BSS84TA |
Diodes Inc. |
MOSFET P-Chnl 50V |
Data Sheet |
|
|
||||||||||||
|
BSS84DW-7-F |
Diodes Inc. |
MOSFET -50V 200mW |
Data Sheet |
|
|
||||||||||||
 |
BSS84V-7 |
Diodes Inc. |
MOSFET Dual P-Channel |
Data Sheet |
|
|
||||||||||||
