Product Summary
The BS170 is a N-Channel enhancement mode field effect transistor. It is produced using Fairchild’s proprietary, high cell density, DMOS technology. The BS170 has been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. The BS170 can be used in most applications requiring up to 500mA DC. The BS170 is particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
Parametrics
BS170 absolute maximum ratings: (1)VDSS, Drain-Source Voltage: 60 V; (2)VDGR, Drain-Gate Voltage (RGS ≤ 1MΩ): 60V; (3)VGSS, Gate-Source Voltage: ± 20 V; (4)ID, Drain Current, Continuou: 500mA; Pulsed: 1200mA; (5)TJ, TSTG, Operating and Storage Temperature Range: - 55 to 150℃; (6)TL, Maximum Lead Temperature for Soldering Purposes, 1/16 inch from Case for 10 Seconds: 300℃.
Features
BS170 features: (1)High density cell design for low RDS(ON); (2)Voltage controlled small signal switch; (3)Rugged and reliable; (4)High saturation current capability.
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
Quantity | |||||||||||||
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BS170 |
Fairchild Semiconductor |
MOSFET N-Channel MOSFET |
Data Sheet |
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BS170_D26Z |
Fairchild Semiconductor |
MOSFET N-Ch Enhancement Mode Field Effect |
Data Sheet |
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BS170_D27Z |
Fairchild Semiconductor |
MOSFET N-Ch Enhancement Mode Field Effect |
Data Sheet |
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BS170_D74Z |
Fairchild Semiconductor |
MOSFET NCh Enhancement Mode |
Data Sheet |
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BS170_D75Z |
Fairchild Semiconductor |
MOSFET N-Ch Enhancement Mode Field Effect |
Data Sheet |
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BS170_J35Z |
Fairchild Semiconductor |
MOSFET 60V N-Ch Signal DMOS |
Data Sheet |
Negotiable |
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BS170_L34Z |
Fairchild Semiconductor |
MOSFET NCh Enhancement Mode |
Data Sheet |
Negotiable |
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BS170_Q |
Fairchild Semiconductor |
MOSFET N-Channel MOSFET |
Data Sheet |
Negotiable |
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