(China (Mainland))
Product Summary
The SI1555DL-T1-E3 is the complementary low-threshold MOSFET pair.
Parametrics
SI1555DL-T1-E3 absolute maximum ratings: (1)Drain-Source Voltage: 20V, -8V; (2)Gate-Source Voltage: ±12V, ±8; (3)Continuous Drain Current (TJ = 150℃): TA = 25℃,± 0.70, ±0.66, -0.60, -0.57A; (4)Continuous Drain Current (TJ = 150℃), TA = 85℃: ±0.50, ±0.48, -0.43, -0.41A; (5)Pulsed Drain Current: ±1.0A; (6)Continuous Source Current (Diode Conduction): 0.25, 0.23, -0.25, -0.23A; (7)Maximum Power Dissipation, TA = 25℃: 0.30, 0.27, 0.30, 0.27W ; (8)Maximum Power Dissipation,TA = 85℃: 0.16, 0.14, 0.16, 0.14W; (9)Operating Junction and Storage Temperature Range: -55 to 150℃.
Features
SI1555DL-T1-E3 features: TrenchFET Power MOSFET.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
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 SI1555DL-T1-E3 |
Vishay/Siliconix |
MOSFET 20/8 0.7/0.6 |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||||||
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Si1501DL |
Other |
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Data Sheet |
Negotiable |
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SI1501DL-T1 |
Vishay/Siliconix |
MOSFET 20 0.25/0.18 |
Data Sheet |
Negotiable |
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SI1539CDL-T1-GE3 |
Vishay/Siliconix |
MOSFET 30 Volts 0.7 Amps 0.34 Watts |
Data Sheet |
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Si1539DL |
Other |
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Data Sheet |
Negotiable |
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SI1539DL-T1 |
Vishay/Siliconix |
MOSFET 30 0.63/0.45 |
Data Sheet |
Negotiable |
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SI1539DL-T1-E3 |
Vishay/Siliconix |
MOSFET 30 0.63/0.45 |
Data Sheet |
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